s m d ty p e w w w . k e x i n . c o m . c n 1 m os f e t f e a tu r e s n - c h a n n e l v d s = 3 0 v i d = 6 a r d s ( o n ) 4 0 m ( v g s = 1 0 v ) r d s ( o n ) 6 0 m ( v g s = 4 . 5 v ) p - c h a n n e l v d s = - 3 0 v i d = - 6 a r d s ( o n ) 4 0 m ( v g s = - 1 0 v ) r d s ( o n ) 7 0 m ( v g s = - 4 . 5 v ) 1 source1 2 gate1 3 source2 4 gate2 5 drain 6 drain 7 drain 8 drain sop -8 0.21 +0.04 -0.02 1.50 0.15 d s 2 s 1 g 2 g 1 a b s o l u te m a x i m u m ra ti n g s t a = 2 5 s y m b o l n - c h a n n e l p - c h a n n e l u n i t v d s 3 0 - 3 0 v g s t a = 2 5 6 - 6 t a = 7 0 4 . 7 - 4 . 7 i d m 3 0 - 3 0 t a = 2 5 t a = 7 0 r t h ja / w t j s t o r a g e t e m p e r a t u r e r a n g e t st g t h e r m a l r e s i s t a n c e . j u n c t i o n - t o - a m b i e n t ( n o t e . 1 ) j u n c t i o n t e m p e r a t u r e c o n t i n u o u s d r a i n c u r r e n t @ t j = 1 5 0 ( n o t e . 1 ) p o w e r d i s s i p a t i o n p a r a m e t e r d r a i n - s o u r c e v o l t a g e g a t e - s o u r c e v o l t a g e p u l s e d d r a i n c u r r e n t 1 5 0 - 5 5 t o 1 5 0 v 5 2 2 0 p d a w 2 . 4 1 . 5 i d n o t e . 1 : s u r f a c e m o u n t e d o n f r 4 b o a r d , t 1 0 s e c . p b? f r ee p ac k age m ay be a v ai l abl e. t he g ? s uffi x denotes a p b? f r ee lead f i ni s h com ple m e nta ry tre nc h m o sfet si4 5 5 8 dy-hf ( k i 4 5 5 8 d y - h f) m a r k i n g 4 558 k a* * * * f m a r k i n g
s m d ty p e w w w . k e x i n . c o m . c n 2 m os f e t e l e c tr i c a l ch a r a c te r i s ti c s t a = 2 5 p a r a m e t e r s y m b o l t e s t c o n d i t i o n s t y p e m i n t y p m a x u n i t i d = 2 5 0 a , v g s = 0 v n - c h 3 0 i d = - 2 5 0 a , v g s = 0 v p - c h - 3 0 v d s = 3 0 v , v g s = 0 v n - c h 1 v d s = - 3 0 v , v g s = 0 v p - c h - 1 v d s = 2 4 v , v g s = 0 v , t j = 7 0 n - c h 5 v d s = - 2 4 v , v g s = 0 v , t j = 7 0 p - c h - 5 g a t e - b o d y l e a k a g e c u r r e n t i g s s v d s = 0 v , v g s = 2 0 v 1 0 0 n a v d s = v g s , i d = 2 5 0 a n - c h 1 v d s = v g s , i d = - 2 5 0 a p - c h - 1 v g s = 1 0 v , i d = 6 a 4 0 v g s = 4 . 5 v , i d = 4 . 8 a 6 0 v g s = - 1 0 v , i d = - 6 a 4 0 v g s = - 4 . 5 v , i d = - 4 . 4 a 7 0 v d s = 5 v , v g s = 1 0 v n - c h 3 0 v d s = - 5 v , v g s = - 1 0 v p - c h - 3 0 v d s = 5 v , v g s = 4 . 5 v n - c h 8 v d s = - 5 v , v g s = - 4 . 5 v p - c h - 8 v d s = 1 5 v , i d = 6 a n - c h 1 3 v d s = - 1 5 v , i d = - 6 a p - c h 1 0 . 6 n - c h 1 6 3 0 n - c h a n n e l : p - c h 2 2 3 5 v g s = 1 0 v , v d s = 1 5 v , i d = 6 a n - c h 3 . 4 p - c h a n n e l : p - c h 5 . 4 v g s = - 1 0 v , v d s = - 1 5 v , i d = - 6 a n - c h 2 . 3 p - c h 3 . 6 n - c h 1 2 2 5 n - c h a n n e l : p - c h 1 2 2 5 v g s = 1 0 v , v d s = 1 5 v , i d = 1 a , r g = 6 n - c h 1 2 2 5 r l = 1 5 p - c h 1 2 2 5 p - c h a n n e l : n - c h 2 7 5 5 v g s = - 1 0 v , v d s = - 1 5 v , i d = - 1 a , r g = 6 p - c h 3 8 5 5 r l = 1 5 n - c h 2 4 5 0 p - c h 2 5 5 0 i f = 2 a , d i / d t = 1 0 0 a / s n - c h 4 5 8 0 i f = - 2 a , d i / d t = 1 0 0 a / s p - c h 5 0 8 0 n - c h 2 p - c h - 2 i s = 2 a , v g s = 0 v n - c h 0 . 7 7 1 . 2 i s = - 2 a , v g s = 0 v p - c h - 0 . 7 7 - 1 . 2 v i d s s a o n - s t a t e d r a i n c u r r e n t ( n o t e . 1 ) i d ( o n ) a d i o d e f o r w a r d v o l t a g e ( n o t e . 1 ) v s d i s a b o d y d i o d e r e v e r s e r e c o v e r y t i m e t r r n s t u r n - o n r i s e t i m e t u r n - o f f d e l a y t i m e m a x i m u m b o d y - d i o d e c o n t i n u o u s c u r r e n t s n c q g q g s q g d g f s d r a i n - s o u r c e b r e a k d o w n v o l t a g e v d s s v z e r o g a t e v o l t a g e d r a i n c u r r e n t t f t d ( o n ) t r t d ( o f f ) g a t e t h r e s h o l d v o l t a g e v g s ( t h ) v n - c h r d s ( o n ) s t a t i c d r a i n - s o u r c e o n - r e s i s t a n c e ( n o t e . 1 ) m p - c h t u r n - o n d e l a y t i m e t u r n - o f f f a l l t i m e f o r w a r d t r a n s c o n d u c t a n c e ( n o t e . 1 ) t o t a l g a t e c h a r g e g a t e s o u r c e c h a r g e g a t e d r a i n c h a r g e n o t e . 1 : p u l s e t e s t ; p u l s e w i d t h 3 0 0 u s , d u t y c y c l e 2 % . com ple m e nta ry tre nc h m o sfet si4 5 5 8 dy-hf ( k i 4 5 5 8 d y - h f)
s m d ty p e w w w . k e x i n . c o m . c n 3 m o s f e t 0 6 12 18 24 30 0 1 2 3 4 5 s c i t s i r e t c a r a h c r e f s n a r t s c i t s i r e t c a r a h c t u p t u o gate charge on-resistance vs. drain current v d s ? drain-to-source v oltage (v) ? drain current (a) i d v g s ? gate-to-source v oltage (v) ? drain current (a) i d ? gate-to-source v oltage (v) q g ? t o ta l ga te char g e ( n c ) v d s ? drain-to-source v oltage (v) c ? capacitance (pf) v gs ? on-resistance ( r ds(on) $ ) i d ? drain current (a) capacitance on-resistance vs. junction t emperature t j ? junction t emperature ( b c) (normalized) ? on-resistance ( r ds(on) $ ) 0 2 4 6 8 10 0 4 8 12 16 0 0.4 0.8 1.2 1.6 2.0 ?50 0 50 100 150 0 0.025 0.050 0.075 0.100 0.125 0.150 0 6 12 18 24 30 0 300 600 900 1200 1500 0 6 12 18 24 30 0 6 12 18 24 30 0 1 2 3 4 5 6 ?55 c v g s = 10 v c r s s c os s c i s s v g s = 4.5 v t c = 125 b c v d s = 15 v i d = 6 a v g s = 10 v i d = 6 a 25 c 4 v 3 v v g s = 10, 9, 8, 7, 6, 5 v b b n-mosfet t y p i c a l ch a r a c te r i s i ti c s com ple m e nta ry tre nc h m o sfet si4 5 5 8 dy-hf ( k i 4 5 5 8 d y - h f)
s m d ty p e w w w . k e x i n . c o m . c n 4 m os f e t . n-mosfet t y p i c a l ch a r a c te r i s i ti c s e g a t l o v e c r u o s - o t - e t a g . s v e c n a t s i s e r - n o e g a t l o v d r a w r o f e d o i d n i a r d - e c r u o s r e w o p e s l u p e l g n i s e g a t l o v d l o h s e r h t normalized thermal t ransient impedance, junction-to-ambient square w ave pulse duration (sec) normalized ef fective t ransient thermal impedance ? on-resistance ( r ds(on) $ ) v sd v ) v ( e g a t l o v n i a r d - o t - e c r u o s ? g s ? gate-to-source v oltage (v) ? source current (a) i s t j ? t emperature ( b ) c e s ( e m i t ) c power (w) ?0.8 ?0.6 ?0.4 ?0.2 ?0.0 0.2 0.4 ?50 0 50 100 150 0 0.02 0.04 0.06 0.08 0.10 0 2 4 6 8 10 t j = 150 b c t j = 25 c 2 1 0.1 0.01 i d = 6 a i d = 250 a 0 0.4 10 0.6 0.8 1.0 1.4 1 10 ?3 10 ?2 1 10 30 10 ?1 10 ?4 1. duty cycle, d = 2. per unit base = r t hj a = 52 c/w 3. t j m ? t a = p d m z t hj a ( t ) t 1 t 2 t 1 t 2 notes: 4. surface mounted p d m 0 8 16 24 32 40 0.01 0.1 1 10 30 duty cycle = 0.5 0.2 0.1 0.05 0.02 single pulse 30 v ariance (v) v gs(th) 1.2 0.2 b b com ple m e nta ry tre nc h m o sfet si4 5 5 8 dy-hf ( k i 4 5 5 8 d y - h f)
s m d ty p e w w w . k e x i n . c o m . c n 5 m o s f e t p-mosfet t y p i c a l ch a r a c te r i s i ti c s s c i t s i r e t c a r a h c r e f s n a r t s c i t s i r e t c a r a h c t u p t u o gate charge on-resistance vs. drain current v d s ? drain-to-source v oltage (v) ? drain current (a) i d v g s ? gate-to-source v oltage (v) ? drain current (a) i d ? gate-to-source v oltage (v) q g ? t o ta l ga te charg e (n c ) v d s ? drain-to-source v oltage (v) c ? capacitance (pf) v gs ? on-resistance ( r ds(on) $ ) i d ? drain current (a) capacitance on-resistance vs. junction t emperature t j ? junction t emperature ( b c) (normalized) ? on-resistance ( r ds(on) $ ) 0 6 12 18 24 30 0 2 4 6 8 10 0 2 4 6 8 10 0 5 10 15 20 25 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 ?50 0 50 100 150 0 0.05 0.10 0.15 0.20 0 6 12 18 24 30 0 500 1000 1500 2000 0 6 12 18 24 30 0 6 12 18 24 30 0 1 2 3 4 5 6 125 c v g s = 10 v c r s s c os s c i s s v g s = 4.5 v t c = ?55 b c v d s = 15 v i d = 6 a v g s = 10 v i d = 6 a 25 c 4 v 3 v v g s = 10, 9, 8, 7, 6, 5 v b b com ple m e nta ry tre nc h m o sfet si4 5 5 8 dy-hf ( k i 4 5 5 8 d y - h f)
s m d ty p e w w w . k e x i n . c o m . c n 6 m os f e t p-mosfet t y p i c a l ch a r a c te r i s i ti c s e g a t l o v e c r u o s - o t - e t a g . s v e c n a t s i s e r - n o e g a t l o v d r a w r o f e d o i d n i a r d - e c r u o s r e w o p e s l u p e l g n i s e g a t l o v d l o h s e r h t normalized thermal t ransient impedance, junction-to-ambient square w ave pulse duration (sec) normalized ef fective t ransient thermal impedance ? on-resistance ( r ds(on) $ ) v sd v ) v ( e g a t l o v n i a r d - o t - e c r u o s ? g s ? gate-to-source v oltage (v) ? source current (a) i s t j ? t emperature ( ) c e s ( e m i t ) c power (w) ?0.6 ?0.4 ?0.2 ?0.0 0.2 0.4 0.6 0.8 ?50 0 50 100 150 0 0.02 0.04 0.06 0.08 0.10 0 2 4 6 8 10 t j = 150 c t j = 25 c 2 1 0.1 0.01 i d = 6 a i d = 250 a 0.4 0.6 10 0.8 1.0 1.2 1.4 1 10 ?3 10 ?2 1 10 30 10 ?1 10 ?4 1. duty cycle, d = 2. per unit base = r t hj a = 52 b c/w 3. t j m ? t a = p d m z t hj a ( t ) t 1 t 2 t 1 t 2 notes: 4. surface mounted p d m 0 8 16 24 32 40 0.01 0.1 1 10 30 duty cycle = 0.5 0.2 0.1 0.05 0.02 single pulse 30 v ariance (v) v gs(th) 0.2 0 b b b com ple m e nta ry tre nc h m o sfet si4 5 5 8 dy-hf ( k i 4 5 5 8 d y - h f)
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